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APTGV25H120T3G
Full - Bridge NPT & Trench + Field Stop(R) IGBT Power module
Trench & Field Stop(R) IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80C
13 14
Application
CR3 Q3 11 10
Q1 18 19
CR1
* Solar converter Features
22 23 Q2
7 8 CR4 Q4
26 27
CR2
* Q2, Q4 (FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 50 kHz - RBSOA & SCSOA rated - Low tail current * Q1, Q3 (Trench & Field Stop IGBT(R)) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * * * * Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
4 3
29 15
30
31 R1
32 16
Top switches : Trench + Field Stop IGBT(R) Bottom switches : FAST NPT IGBT(R)
28 27 26 25 29 30
23 22
20 19 18 16 15
Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant * * * *
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com June, 2007 APTGV25H120T3G - Rev 0
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APTGV25H120T3G
All ratings @ Tj = 25C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT(R) characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 50 20 156 50A @ 1150V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 25A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 25A RG = 27 VGE = 15V Tj = 25C VBus = 600V Tj = 125C IC = 25A Tj = 25C RG = 27 Tj = 125C Min Typ 1800 82 90 30 420 70 90 50 520 90 1.9 2.5 1.9 2.9 0.8 Max Unit pF
ns
ns
mJ C/W
June, 2007
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APTGV25H120T3G
1.2 Top fast diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 2.6 3.2 1.8 300 380 360 1700
3.1 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.2
C/W
2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 100 20 208 50A@1150V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit A V V nA
June, 2007
2.5 4
3.2 4.0
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Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 25A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 25A RG = 22 VGE = 15V Tj = 125C VBus = 400V IC = 25A Tj = 125C RG = 22 Min Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 mJ 1.5 0.6
C/W
Max
Unit pF
nC
ns
ns
2.2 Bottom diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 2.6 3.2 1.8 300 380 360 1700
3.1 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.2
C/W
RT =
R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
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APTGV25H120T3G - Rev 0
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
Min
Typ 50 3952
Max
Unit k K
June, 2007
3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
APTGV25H120T3G
4. Package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 150* 125 100 4.7 110
Unit V C N.m g
Tj=175C for Trench & Field Stop IGBT
5. SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
6. Top switches curves 6.1 Top Trench + Field Stop IGBT(R) typical performance curves
Output Characteristics (VGE=15V) Output Characteristics 50
TJ = 125C VGE=17V VGE=13V
50
TJ=25C
40
TJ=125C
IC (A)
IC (A)
20 10 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
20 10 0 0 1 2 VCE (V) 3
VGE=9V
4
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30
17 12
28
40 30
VGE=15V
APTGV25H120T3G
50 40 30 20 10 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 1 0 0 40 80 120 160 Gate Resistance (ohms) 200
Eon VCE = 600V VGE =15V IC = 25A TJ = 125C
Transfert Characteristics 6 5
TJ=25C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 27 TJ = 125C Eon
4 E (mJ)
TJ=125C
Eoff Eon
IC (A)
3 2
TJ=25C
1 0 0 10 20 IC (A) Reverse Bias Safe Operating Area 60 30 40 50
Eon
50 40 IC (A)
Eoff
30 20 10 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=27
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.9
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
6.2 Top Fast diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A)
60
T J=1 25C
40
T J=25C
20
T J=-55C
0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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APTGV25H120T3G
7. Bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves
80 Ic, Collector Current (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle TJ=125C
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=25C
20 16 12 8 4 0
8
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 25A TJ = 25C VCE=240V VCE=600V
120
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0
100 80 60 40
VCE=960V
TJ=125C
20 0 0
TJ=25C
2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
30
60
90
120
150
180
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=50A Ic=25A
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0
Ic=50A
Ic=25A
Ic=12.5A
Ic=12.5A
10
11
12
13
14
15
16
-50
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.10 Ic, DC Collector Current (A) 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
60 50 40 30 20 10 0
DC Collector Current vs Case Temperature
-50
-25
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APTGV25H120T3G - Rev 0
0 25 50 75 100 125 150 TC, Case Temperature (C)
June, 2007
APTGV25H120T3G
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 22
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 160
VCE = 600V RG = 22
400
VGE=15V, TJ=125C
350
VGE = 15V
300
VGE=15V, TJ=25C
250
VCE = 600V RG = 22
200 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40 35 30 25
TJ = 25C
80
VGE=15V
40
VCE = 600V, VGE = 15V, RG = 22
0 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
VCE = 600V RG = 22
20 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55
Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 4
VCE = 600V VGE = 15V RG = 22 TJ = 125C
Eon, Turn-On Energy Loss (mJ)
10 8 6 4 2 0 5
TJ=125C, VGE=15V
3
TJ=25C, VGE=15V
2
TJ = 25C
1
0
15 25 35 45 ICE, Collector to Emitter Current (A)
55
5
15 25 35 45 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
55
Switching Energy Losses (mJ)
5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
VCE = 600V VGE = 15V TJ= 125C
60 IC, Collector Current (A) 50 60
Eon, 25A
50 40 30 20 10 0
Eoff, 25A
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
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0
10
20
30
40
0
400
800
1200
APTGV25H120T3G
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000
Cies
Operating Frequency vs Collector Current 120 100 80
ZVS VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
60 40 20 0 0 10 20 30 IC, Collector Current (A) 40
Hard switching ZCS
100
Cres
10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1
0.5 0.3 0.1 0.05 0.9 0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A)
60
T J=1 25C
40
T J=25C
20
T J=-55C
0 0.0 1.0 2.0 3.0 4.0 V F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.9 0.7 0.5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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0.1 0.05
Single Pulse

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